Strained-si heterostructure field effect devices
Auteur :
Maiti, C.K / Chattopadhyay, S / Bera, L.K
Éditeur :
Taylor & Francis Ltd
ISBN :
9780750309936
Date de publication :
11 janv. 2007
Dimensions :
23,4 x 15,6 cm
Poids :
742 g
Langue :
Anglais
Pays d'origine :
Grande Bretagne
Brings together materials science, manufacturing processes, and research and developments of SiGe and strained-Si. This book contains the information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology and strain-engineered MOSFETs. It presents various aspects of silicon heterostructure materials and devices.