Thin film ferroelectric materials and devices
Auteur :
Ramesh, R.
ISBN :
9780792399933
Date de publication :
30 sept. 1997
Dimensions :
23,4 x 15,6 x 1,5 cm
Poids :
553 g
Format :
Laminated cover
Langue :
Anglais
Pays d'origine :
USA
A compilation of research and development in two ferroelectric device technologies, namely ferroelectrics for Dynamic Random Access Memories (DRAMs) and Non-Volatile Ferroelectric Random Access Memories (NV-FRAMs). This book is useful to materials and device scientists, device and process engineers, students, and postdoctoral associates.