High electron mobility transistors and heterojunction bipolar transistors: devices, fabrication and circuits
Auteur :
Ali, Fazal
ISBN :
9780890064016
Date de publication :
1 déc. 1991
Dimensions :
22,9 x 15,2 x 2,5 cm
Poids :
744 g
Format :
Laminated cover
Langue :
Anglais
Pays d'origine :
USA
Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.