Sige and si strained-layer epitaxy for silicon heterostructure devices
Auteur :
Cressler, John D.
Éditeur :
Taylor & Francis Inc
ISBN :
9781420066852
Date de publication :
13 déc. 2007
Dimensions :
25,4 x 17,8 cm
Poids :
650 g
Langue :
Anglais
Pays d'origine :
USA
Focuses on the materials science aspects of silicon heterostructure. This book defines the various advances in the Si-SiGe strained-layer epitaxy for device applications. It covers modern SiGe epitaxial growth techniques, EPI defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe and Si-C alloys.