Silicon heterostructure devices
Auteur :
Cressler, John D.
Éditeur :
Taylor & Francis Inc
ISBN :
9781420066906
Date de publication :
13 déc. 2007
Dimensions :
25,4 x 17,8 cm
Poids :
1030 g
Langue :
Anglais
Pays d'origine :
USA
Highlights silicon-based heterostructure devices and divides them into four sections: SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, other heterostructure devices, and optoelectronic components. This book covers topics including device physics, broadband noise, performance limits, reliability, and engineered substrates.