Modeling bipolar power semiconductor devices
Auteur :
Gachovska, Tanya K. / Hudgins, Jerry L. / Santi, Enrico / Bryant, Angus
Éditeur :
Springer International Publishing AG
ISBN :
9783031013706
Date de publication :
4 avr. 2013
Dimensions :
23,5 x 19,1 cm
Langue :
Anglais
Pays d'origine :
Suisse
The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior.