Transient electro-thermal modeling on power semiconductor devices
Auteur :
Gachovska, Tanya Kirilova / Hudgins, Jerry / Du, Bin / Santi, Enrico
Éditeur :
Springer International Publishing AG
ISBN :
9783031013782
Date de publication :
26 nov. 2013
Dimensions :
23,5 x 19,1 cm
Langue :
Anglais
Pays d'origine :
Suisse
The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device.