Hf-based high-k dielectrics: process development, performance characterization, and reliability
Auteur :
Kim, Young-Hee / Lee, Jack C.
Éditeur :
Springer International Publishing AG
ISBN :
9783031014246
Date de publication :
31 déc. 2007
Dimensions :
23,5 x 19,1 cm
Langue :
Anglais
Pays d'origine :
Suisse
Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm).