Handbook for iii-v high electron mobility transistor technologies
Éditeur :
Taylor & Francis Ltd
ISBN :
9780367729240
Date de publication :
18 déc. 2020
Dimensions :
25,4 x 17,8 cm
Poids :
775 g
Langue :
Anglais
Pays d'origine :
Grande Bretagne
The book covers III-V high electron mobility transistors (HEMT) and their basic physics, materials, fabrication, reliability, modeling and simulation with detailed DC, RF and breakdown performances of high electron mobility transistors, with reference to AlGaN/GaN HEMTs, MoS HEMT, InP HEMTs and DG-HEMTs.