Photo-induced defects in semiconductors
Auteur :
Redfield, David / Bube, Richard H.
Éditeur :
Cambridge University Press
ISBN :
9780521024457
Date de publication :
9 mars 2006
Dimensions :
22,9 x 15,2 x 1,4 cm
Poids :
350 g
Format :
Trade paperback (US)
Langue :
Anglais
Pays d'origine :
Grande Bretagne
This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices.