Applications of silicon-germanium heterostructure devices
Auteur :
Maiti, C.K / Armstrong, G.A
Éditeur :
Taylor & Francis Ltd
ISBN :
9780750307239
Date de publication :
20 juil. 2001
Dimensions :
23,4 x 15,6 cm
Poids :
839 g
Langue :
Anglais
Pays d'origine :
Grande Bretagne
Deals with the design and optimization of transistors made from strained layers. This book covers key technology issues for the growth of strained layers, background theory of the HBT, and how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics.