Narrow gap semiconductors: proceedings of the 12th international conference on narrow gap semiconductors
Éditeur :
Taylor & Francis Ltd
ISBN :
9780750310161
Date de publication :
25 mai 2006
Dimensions :
23,4 x 15,6 cm
Poids :
1179 g
Langue :
Anglais
Pays d'origine :
Grande Bretagne
Offers a presentation in several areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. This work examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe.