Microwave metal semiconductor field effect transistors and high electron mobility transistors
Auteur :
Golio, J.Michael
ISBN :
9780890064269
Date de publication :
1 févr. 1991
Dimensions :
22,9 x 15,2 x 2,3 cm
Poids :
709 g
Format :
Laminated cover
Langue :
Anglais
Pays d'origine :
USA
Takes the reader from the basic operating principles of the microwave MESFET and HEMT to the application of device models in modern CAD programs. Detailed comparisons of MESFET and HEMT are presented, and ultimate limitations to the devices are discussed.