Nitride wide bandgap semiconductor material and electronic devices
Auteur :
Hao, Yue / Zhang, Jin Feng / Zhang, Jin Cheng
Éditeur :
Taylor & Francis Inc
ISBN :
9781498745123
Date de publication :
3 oct. 2016
Dimensions :
25,4 x 17,8 cm
Poids :
884 g
Langue :
Anglais
Pays d'origine :
USA
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).