Compound semiconductor materials and devices
Auteur :
Liu, Zhaojun / Huang, Tongde / Li, Qiang / Lu, Xing / Zou, Xinbo
Éditeur :
Springer International Publishing AG
ISBN :
9783031009006
Date de publication :
22 févr. 2016
Dimensions :
23,5 x 19,1 cm
Langue :
Anglais
Pays d'origine :
Suisse
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications.