Resistive random access memory (rram)
Auteur :
Yu, Shimeng
Éditeur :
Springer International Publishing AG
ISBN :
9783031009020
Date de publication :
17 mars 2016
Dimensions :
23,5 x 19,1 cm
Langue :
Anglais
Pays d'origine :
Suisse
State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed.