Parameter-centric scaled fet devices: physics based perspectives and attributes
Auteur :
Ashraf, Nabil Shovon
Éditeur :
Springer International Publishing AG
ISBN :
9783031842856
Date de publication :
27 mars 2025
Dimensions :
24,0 x 16,8 cm
Langue :
Anglais
Pays d'origine :
Suisse
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy.