Emerging resistive switching memories
Auteur :
Ouyang, Jianyong
Éditeur :
Springer International Publishing AG
ISBN :
9783319315706
Date de publication :
11 juil. 2016
Dimensions :
23,5 x 15,5 cm
Langue :
Anglais
Pays d'origine :
Suisse
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.