Strain-induced effects in advanced mosfets
Auteur :
Sverdlov, Viktor
Éditeur :
Springer Verlag GmbH
ISBN :
9783709119334
Date de publication :
23 août 2016
Dimensions :
24,0 x 16,8 cm
Langue :
Anglais
Pays d'origine :
Autriche
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.