Terrestrial neutron-induced soft error in advanced memory devices
Auteur :
Nakamura, Takashi / Ibe, Eishi / Baba, Mamoru / Yahagi, Yasuo / Kameyama, Hideaki
Éditeur :
World Scientific Publishing Co Pte Ltd
ISBN :
9789812778819
Date de publication :
3 avr. 2008
Langue :
Anglais
Pays d'origine :
Singapour
Terrestrial neutron-induced soft errors of semiconductor memory devices are a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant topics in terrestrial neutron-induced soft errors.